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AMD Mobile Serial VID Dual-Phase
Fixed-Frequency Controller
V GS ( TH ) > V IN ? RSS ?
Thermal-Fault Protection
The MAX17009 features a thermal-fault protection cir-
cuit. When the junction temperature rises above
+160°C, a thermal sensor sets the fault latch and shuts
down, immediately forcing DH and DL low, without
going through the soft-shutdown sequence. Toggle
SHDN or cycle the V CC power supply below 0.5V to
clear the fault latch and reactivate the controller after
the junction temperature cools by 15°C.
MOSFET Gate Drivers
The DH and DL drivers are optimized for driving mode-
rate-sized high-side and larger low-side power
MOSFETs. This is consistent with the low duty factor
seen in notebook applications where a large V IN - V OUT
differential exists. The high-side gate drivers (DH)
source and sink 2.2A, and the low-side gate drivers
(DL) source 2.7A and sink 8A. This ensures robust gate
drive for high-current applications. The DH floating
high-side MOSFET drivers are powered by internal
boost switch charge pumps at BST, while the DL syn-
chronous-rectifier drivers are powered directly by the
5V bias supply (V DD ).
? C ?
? C ISS ?
Typically, adding a 4700pF between DL and power
ground (C NL in Figure 9), close to the low-side
MOSFETs, greatly reduces coupling. Do not exceed
22nF of total gate capacitance to prevent excessive
turn-off delays.
Alternatively, shoot-through currents can be caused by
a combination of fast high-side MOSFETs and slow low-
side MOSFETs. If the turn-off delay time of the low-side
MOSFET is too long, the high-side MOSFETs can turn
on before the low-side MOSFETs have actually turned
off. Adding a resistor less than 5 Ω in series with BST
slows down the high-side MOSFET turn-on time, elimi-
nating the shoot-through currents without degrading
the turn-off time (R BST in Figure 9). Slowing down the
high-side MOSFET also reduces the LX node rise time,
thereby reducing EMI and high-frequency coupling
responsible for switching noise.
Adaptive dead-time circuits monitor the DL and DH dri-
vers and prevent either FET from turning on until the
other is fully off. The adaptive driver dead time allows
operation without shoot-through with a wide range of
MOSFETs, minimizing delays and maintaining efficiency.
There must be a low-resistance, low-inductance path
BST
DH
LX
(R BST )*
C BST
N H
INPUT (V IN )
L
from the DL and DH drivers to the MOSFET gates for
the adaptive dead-time circuits to work properly; other-
wise, the sense circuitry in the MAX17009 interprets the
MOSFET gates as “off” while charge actually remains.
Use very short, wide traces (50 mils to 100 mils wide if
the MOSFET is 1in from the driver).
V DD
C BYP
The internal pulldown transistor that drives DL low is
robust, with a 0.25 Ω (typ) on-resistance. This helps pre-
vent DL from being pulled up due to capacitive cou-
pling from the drain to the gate of the low-side
DL
PGND
(C NL )*
N L
MOSFETs when the inductor node (LX) quickly switch-
es from ground to V IN . Applications with high input volt-
ages and long inductive driver traces may require
rising LX edges that do not pull up the low-side
MOSFETs’ gate, causing shoot-through currents. The
capacitive coupling between LX and DL created by the
MOSFET’s gate-to-drain capacitance (C RSS ), gate-to-
source capacitance (C ISS - C RSS ), and additional
board parasitics should not exceed the following mini-
mum threshold:
(R BST )* OPTIONAL—THE RESISTOR LOWERS EMI BY DECREASING THE
SWITCHING NODE RISE TIME.
(C NL )* OPTIONAL—THE CAPACITOR REDUCES LX TO DL CAPACITIVE
COUPLING THAT CAN CAUSE SHOOT-THROUGH CURRENTS.
Figure 9. Gate Drive Circuit
34
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